NTE5536 Silicon Controlled Rectifier (SCR)
Description: The NTE5536 is a silicon controlled rectifier (SCR) in a TO220 type package designed for use as back-to-back SCR output devices for solid state relays or applications requiring high surge operation. Features: D 400A Surge Capability D 800V Blocking Voltage Absolute Maximum Ratings: Peak Reverse Blocking Voltage (Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS Forward Current (TC = +80C, Note 2), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Average Forward Current (All Conduction Angles, Note 2), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave), ITSM 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A 1.5ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450A Forward Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Forward Peak Gate Current (300s, 120 PPS), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W Note 1. VRRM can be applied on a continuous DC basis without incurring damage. Ratings apply for zero or negative voltage. Device should be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. Note 2. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device i to be used at high sustained currents.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Peak Forward Blocking Voltage Peak Forward or Reverse Blocking Current Symbol VDRM IDRM, IRRM VTM IGT Test Conditions TJ = +125C Rated VDRM or VRRM, TJ = +25C Rated VDRM or VRRM, TJ = +125C Forward ON Voltage Gate Trigger Current, Continuous DC ITM = 80A, Note 3 Anode Voltage = 12V, RL = 100 Anode Voltage = 12V, RL = 100, TC = -40C Gate Trigger Voltage, Continuous DC Gate Non-Trigger Voltage Holding Current Turn-On Time Critical Rate of Rise of Off-State Voltage VGT VGD IH tgt dv/dt Anode Voltage = 12V, RL = 100 Anode Voltage = 800V, RL = 100, TJ = +125C Anode Voltage = 12V ITM = 40A, IGT = 60mA VDRM = 800V, Gate Open, Exponential Waveform Min 800 - - - - - - 0.2 - - - Typ - - - 1.6 15 30 1.0 - 30 1.5 50 Max - 10 2 2.0 50 90 1.5 - 60 - - Unit V A mA V mA mA V V mA s V/s
Note 3. Pulse test: Pulse Width 300s, Duty Cycle 2%.
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode .100 (2.54) Gate Anode/Tab
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